HGT1S10N120BNS Datasheet | Fairchild Semiconductor

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs bine the best Features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49290. Features - 35A, 1200V, TC = 25o C - 1200V Switching SOA Capability - Typical Fall Time- - - . 140ns at TJ = 150o C - Short Circuit Rating - Low Conduction Loss - Avalanche Rated - Thermal Impedance SPICE Model Temperature pensating SABER™ Model .fairchildsemi. - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards Ordering Information PART NUMBER HGTG10N120BN HGTP10N120BN HGT1S10N120BNS PACKAGE TO-247 TO-220AB TO-263AB BRAND G10N120BN 10N120BN 10N120BN Packaging JEDEC STYLE TO-247 E C COLLECTOR (FLANGE) G NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g. HGT1S10N120BNST. Symbol JEDEC TO-220AB (ALTERNATE VERSION) COLLECTOR (FLANGE) E JEDEC TO-263AB COLLECTOR (FLANGE) FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432...