HGT1S12N60A4S9A Datasheet N-channel IGBT

Manufacturer: Fairchild (now onsemi)

Overview: HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the.

Datasheet Details

Part number	HGT1S12N60A4S9A
Manufacturer	Fairchild (now onsemi)
File Size	229.62 KB
Description	N-Channel IGBT
Datasheet	HGT1S12N60A4S9A_FairchildSemiconductor.pdf

Key Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching.

HGT1S12N60A4S9A Distributor

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