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HGT1S20N60A4S9A Datasheet Smps Series N-channel IGBTs

Manufacturer: Fairchild (now onsemi)

Overview: Data Sheet HGT1S20N60A4S9A March 2006 600V, SMPS Series N-Channel IGBTs The HGT1S20N60A4S9A is MOS gated high voltage switching devices bining the.

HGT1S20N60A4S9A datasheet preview

Datasheet Details

Part number	HGT1S20N60A4S9A
Manufacturer	Fairchild (now onsemi)
File Size	231.40 KB
Description	SMPS Series N-Channel IGBTs
Datasheet	HGT1S20N60A4S9A-FairchildSemiconductor.pdf

Key Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching.

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