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HGT4E20N60A4DS Datasheet 600v Smps Series N-channel IGBT

Manufacturer: Fairchild (now onsemi)

Overview: HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices bine the.

HGT4E20N60A4DS datasheet preview

Datasheet Details

Part number	HGT4E20N60A4DS
Manufacturer	Fairchild (now onsemi)
File Size	204.32 KB
Description	600V SMPS Series N-Channel IGBT
Datasheet	HGT4E20N60A4DS_FairchildSemiconductor.pdf

Key Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. These IGBT’s are ideal for many high voltage switching.

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