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HGTD7N60C3S Datasheet Ufs Series N-channel IGBTs

Manufacturer: Fairchild (now onsemi)

Overview: Data Sheet HGTD7N60C3S, HGTP7N60C3 December 2001 14A, 600V, UFS Series N-Channel IGBTs The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the.

Key Features

  • of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching.

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