Fairchild Semiconductor HGTG10N120BND
The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.| Part No. | HGTG10N120BND |
|---|---|
| Datasheet | HGTG10N120BND Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● 35A, 1200V, TC = 25oC● 1200V Switching SOA Capability
● Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ = 150oC
● Short Circuit Rating
● Low Conduction Loss Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG10N120BND PACKAGE TO-247 BRAND 10N120BND NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2001 Fairchild Semiconductor Corporation HGTG10N120BND Rev. B HGTG10N120BND
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified HGTG10N120BND 1200 3...
