Fairchild Semiconductor HGTG11N120CN
The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.FEATURES
● 43A, 1200V, TC = 25oC● 1200V Switching SOA Capability
● Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC
● Short Circuit Rating
● Low Conduction Loss
● Avalanche Rated
● Thermal Impedance SPICE Model Temperature Compensating SABER™ Model
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HGTG11N120CN HGTP11N120CN HGT1S11N120CNS PACKAGE TO-247 TO-220AB TO-263AB BRAND G11N120CN 11N120CN 11N120CN Packaging JEDEC STYLE TO-247 E COLLECTOR (BOTTOM SIDE METAL) C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S11N120CNS9A. Symbol C JEDEC TO-220AB (ALTERNATE VERSION) G COLLECTOR (FLANGE) G C E E JEDEC TO-263AB G E COLLECTOR (FLANGE) FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,...