Datasheet4U.com

HGTP12N60C3D Datasheet N-channel IGBT

Manufacturer: Fairchild (now onsemi)

Overview: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices bine the.

HGTP12N60C3D datasheet preview

Datasheet Details

Part number	HGTP12N60C3D
Manufacturer	Fairchild (now onsemi)
File Size	154.93 KB
Description	N-Channel IGBT
Datasheet	HGTP12N60C3D_FairchildSemiconductor.pdf

Key Features

of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	HGTP12N60C3D	N-Channel IGBT	Intersil Corporation
	HGTP12N60C3	N-Channel IGBT	Intersil Corporation

More Datasheets from Fairchild (now onsemi)

Part Number	Description
HGTP12N60C3	N-Channel IGBT
HGTP12N60A4	N-Channel IGBT
HGTP12N60A4D	N-Channel IGBT
HGTP12N60B3D	N-Channel IGBT
HGTP10N120BN	N-Channel IGBT
HGTP11N120CN	N-Channel IGBT
HGTP14N36G3VL	N-Channel IGBT
HGTP14N37G3VL	N-Channel IGBT
HGTP14N40F3VL	N-Channel IGBT
HGTP14N41G3VL	N-Channel IGBT

HGTP12N60C3D Distributor