HGTP14N40F3VL Datasheet | Fairchild Semiconductor

HGTP14N40F3VL / HGT1S14N40F3VLS January 2002 HGTP14N40F3VL / HGT1S14N40F3VLS 330m J, 400V, N-Channel Ignition IGBT General Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique Features include an active voltage clamp between the drain and the gate and ESD protection for the logic level gate. Some specifications are unique to this automotive application and are intended to assure device survival in this harsh environment. Formerly Developmental Type 49023 Applications - Automotive Ignition Coil Driver Circuits - Coil-On Plug Applications Features - - - - - Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection Max TJ = 175o C SCIS Energy = 330m J at TJ = 25o C Package JEDEC TO-263AB D² -Pak JEDEC TO-220AB E Symbol R1 GATE COLLECTOR G E COLLECTOR (FLANGE) COLLECTOR (FLANGE) EMITTER Device Maximum Ratings TA = 25°C unless otherwise noted Symbol BVCES BVCGR ESCIS25 IC25 IC90 VGES VGEM ICO ICO PD TJ, TSTG TL Tpkg ESD Parameter Collector to Emitter Breakdown Voltage (IC = 1 m A) Collector to Gate Breakdown Voltage (RGE = 10KΩ) Drain to Source Avalanche Energy at L = 2.3m Hy, TC = 25°C Collector Current Continuous, at TC = 25°C, VGE = 4.5V Collector Current Continuous, at TC = 90°C, VGE = 4.5V Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed L = 2.3m Hy, TC = 25°C L = 2.3m Hy, TC = 150°C Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C Operating and Storage Junction Temperature Range Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) Max Lead Temp for Soldering (Package Body for 10s) Electrostatic Discharge Voltage at 100p F, 1500Ω Ratings 420 420 330 38 35 ±10 ±12 17 12 262 1.75 -40 to 175 300 260 6 Units V V m J A A V V A A W W/°C °C °C °C KV ©2002 Fairchild Semiconductor Corporation HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002 HGTP14N40F3VL / HGT1S14N40F3VLS Package Marking and...