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HGTP3N60C3D

Manufacturer: Fairchild (now onsemi)

HGTP3N60C3D datasheet by Fairchild (now onsemi).

HGTP3N60C3D datasheet preview

HGTP3N60C3D Datasheet Details

Part number HGTP3N60C3D
Datasheet HGTP3N60C3D_FairchildSemiconductor.pdf
File Size 327.17 KB
Manufacturer Fairchild (now onsemi)
Description N-Channel IGBT
HGTP3N60C3D page 2 HGTP3N60C3D page 3

HGTP3N60C3D Overview

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices bining the.

HGTP3N60C3D Key Features

  • 6A, 600V at TC = 25oC
  • 600V Switching SOA Capability
  • Typical Fall Time
  • 130ns at TJ = 150oC
  • Short Circuit Rating
  • Low Conduction Loss
  • Hyperfast Anti-Parallel Diode

HGTP3N60C3D from other manufacturers

View HGTP3N60C3D datasheet index

Brand Logo Part Number Description Other Manufacturers
Intersil Corporation Logo HGTP3N60C3D N-Channel IGBT Intersil Corporation
Harris Corporation Logo HGTP3N60C3D UFS Series N-Channel IGBT Harris Corporation
Intersil Corporation Logo HGTP3N60C3 N-Channel IGBT Intersil Corporation
Fairchild (now onsemi) logo - Manufacturer

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