HGTP3N60C3D Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices bining the.
HGTP3N60C3D Key Features
- 6A, 600V at TC = 25oC
- 600V Switching SOA Capability
- Typical Fall Time
- 130ns at TJ = 150oC
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti-Parallel Diode