HGTP7N60C3D - N-Channel IGBT

Product Overview

Fairchild Semiconductor

Part number	HGTP7N60C3D
Manufacturer	Fairchild Semiconductor
File Size	528.34 KB
Description	N-Channel IGBT
Datasheet	HGTP7N60C3D Datasheet
Additional preview pages of the HGTP7N60C3D datasheet.

The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057. The IGBT is ideal for many high voltage switching.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Mar 23, 2005 |