HP4410DY Overview
HP4410DY Data Sheet December 2001 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery...
HP4410DY Key Features
- Logic Level Gate Drive
- 10A, 30V
- rDS(ON) = 0.0135Ω at ID = 10A, VGS = 10V
- rDS(ON) = 0.020Ω at ID = 8A, VGS = 4.5V
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”
