HP4936DY Overview
HP4936DY Data Sheet December 2001 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time...
HP4936DY Key Features
- Logic Level Gate Drive
- 5.8A, 30V
- rDS(ON) = 0.037Ω at ID = 5.8A, VGS = 10V
- rDS(ON) = 0.055Ω at ID = 4.7A, VGS = 4.5V
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”
