HRF3205 Description
HRF3205, HRF3205S Data Sheet December 2001 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators,...
HRF3205 Key Features
- 100A, 55V (See Note)
- Low On-Resistance, rDS(ON) = 0.008Ω
- Temperature pensating PSPICE® Model
- Thermal Impedance SPICE Model
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”
- VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1)
- VDGR Gate to Source Voltage
- VGS Drain Current Continuous