HUF75307T3ST Description
Data Sheet HUF75307T3ST December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low...
HUF75307T3ST Key Features
- 2.6A, 55V
- Ultra Low On-Resistance, rDS(ON) = 0.090Ω
- Diode Exhibits Both High Speed and Soft Recove