Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance SPICE and SABER Models Available on the WEB at: www. fairchildsemi. com.
Peak Current vs Pulse Width Curve.
UIS Rating Curve.
Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE DRAIN GATE
Product reliability information can be found at http://www. f.
Full PDF Text Transcription for HUF75321P3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HUF75321P3. For precise diagrams, and layout, please refer to the original PDF.
Data Sheet October 2013 HUF75321P3 N-Channel UltraFET Power MOSFET 55 V, 35 A, 34 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process....
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power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. Formerly developmental type TA7532
HUF75321P3 Datasheet
