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HUF75333P3 - N-Channel UltraFET Power MOSFETs

Download the HUF75333P3 datasheet PDF (HUF75333G3 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel ultrafet power mosfets.

Features

  • 66A, 55V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly developmental type TA75333 Symbol D G S JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE DRAIN (TAB) JEDEC TO-263AB GATE SOU.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HUF75333G3-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

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HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. .
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