HUF75344A3 - N-Channel UltraFET Power MOSFET

Fairchild (now onsemi)

General Description

This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process.

This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.

Key Features

RDS(on) = 6.5mΩ ( Typ. )@ VGS = 10V, ID = 75A.
RoHS compliant.

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HUF75344A3 n-channel ultrafet power mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	HUF75344A3
Manufacturer	Fairchild (now onsemi)
File Size	418.18 KB
Description	N-Channel UltraFET Power MOSFET
Datasheet	HUF75344A3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUF75344A3 N-Channel UltraFET Power MOSFET October 2007 HUF75344A3 N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ tm Features • RDS(on) = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A • RoHS compliant Description • This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored change.