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HUF75631S3ST - N-Channel MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve HUF75631P3 HUF75631S3ST Symbol D Ordering Information PART NUMBER HUF75631P3 G.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) Features • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve HUF75631P3 HUF75631S3ST Symbol D Ordering Information PART NUMBER HUF75631P3 G PACKAGE TO-220AB TO-263AB BRAND 75631P 75631S HUF75631S3ST S NOTE: When ordering, use the entire part number, e.g., HUF75631S3ST.