HUF75639S3R4851 Overview
HUF75639S3R4851 Data Sheet December 2001 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low...
HUF75639S3R4851 Key Features
- 56A, 115V
- Simulation Models
- Temperature pensated PSPICE® and SABER™ Electrical Models
- Spice and Saber Thermal Impedance Models
- fairchildsemi
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”
