HUF76105DK8 Description
HUF76105DK8 Data Sheet January 2003 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is ® manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits...
HUF76105DK8 Key Features
- Logic Level Gate Drive
- 5A, 30V
- Ultra Low On-Resistance, rDS(ON) = 0.050Ω
- Temperature pensating PSPICE® Model
- Temperature pensating SABER© Model
- Thermal Impedance SPICE Model
- Thermal Impedance SABER Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature