HUF76105SK8 Description
HUF76105SK8 Data Sheet January 2003 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very...
HUF76105SK8 Key Features
- Logic Level Gate Drive
- 5.5A, 30V
- Ultra Low On-Resistance, rDS(ON) = 0.050Ω
- Simulation Models
- Temperature pensated PSPICE® and SABER™ Electrical Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at: .fairchildsemi
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Transient Thermal Impedance Curve vs Board Mounting Area
- Related Literature