HUF76107P3 Overview
HUF76107P3 Data Sheet January 2003 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits...
HUF76107P3 Key Features
- Logic Level Gate Drive
- 20A, 30V
- Ultra Low On-Resistance, rDS(ON) = 0.052Ω
- Temperature pensating PSPICE® Model
- Temperature pensating SABER© Model
- Thermal Impedance SPICE Model
- Thermal Impedance SABER Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
