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HUF76609D3S - N-Channel MOSFET

Key Features

  • JEDEC TO-252AA.
  • Ultra Low On-Resistance DRAIN - rDS(ON) = 0.160Ω, VGS = 10V N GATE IG SOURCE (FLANGE) TMEINNDOEUDURFoOOEnRRseMNmDAEiTWIODNES Symbol D G S - rDS(ON) = 0.165Ω, VGS = 5V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. Fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Switching Time vs RGS Curves Ordering Information PART NUM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet May 2024 HUF76609D3S N-Channel Logic Level UltraFET Power MOSFET 100 V, 10 A, 165 mΩ Packaging Features JEDEC TO-252AA • Ultra Low On-Resistance DRAIN - rDS(ON) = 0.160Ω, VGS = 10V N GATE IG SOURCE (FLANGE) TMEINNDOEUDURFoOOEnRRseMNmDAEiTWIODNES Symbol D G S - rDS(ON) = 0.165Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.Fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PART NUMBER HUF76609D3ST PACKAGE TO-252AA BRAND 76609D ORENCOTMACT YOR INF Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified COT ON E F Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . .