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HUF76619D3S - N-Channel MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.085Ω, VGS = 10V - rDS(ON) = 0.087Ω, VGS = 5V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. Fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Switching Time vs RGS Curves SOURCE DRAIN GATE GATE SOURCE HUF76619D3 HUF76619D3S Symbol D Ordering Information G PART NUMBER HUF76619D3 S.

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📁 Similar Datasheet

Part Number Description Manufacturer
HUF76619D3S N-Channel MOSFET Intersil Corporation
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HUF76609D3S N-Channel MOSFET Intersil Corporation
HUF76629D3 N-Channel MOSFET Intersil Corporation

Other Datasheets by Fairchild (now onsemi)

Part Number Description
HUF76619D3 N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUF76619D3, HUF76619D3S Data Sheet December 2001 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-251AA DRAIN (FLANGE) JEDEC TO-252AA DRAIN (FLANGE) Features • Ultra Low On-Resistance - rDS(ON) = 0.085Ω, VGS = 10V - rDS(ON) = 0.087Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.Fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves SOURCE DRAIN GATE GATE SOURCE HUF76619D3 HUF76619D3S Symbol D Ordering Information G PART NUMBER HUF76619D3 S PACKAGE TO-251AA TO-252AA BRAND 76619D 76619D HUF76619D3S NOTE: When ordering, use the entire part number.