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HUF76629D3S - N-Channel MOSFET

Datasheet Summary

Features

  • Ultra Low On-Resistance - rDS(ON) = 0.052Ω, VGS = 10V - rDS(ON) = 0.054Ω, VGS = 5V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electriecal Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76629D3 HUF76629D3S Symbol D.
  • Switching Time vs RGS Curves Ordering Information PART NUMBER.

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Datasheet Details

Part number HUF76629D3S
Manufacturer Fairchild Semiconductor
File Size 203.15 KB
Description N-Channel MOSFET
Datasheet download datasheet HUF76629D3S Datasheet
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HUF76629D3, HUF76629D3S Data Sheet December 2001 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN (FLANGE) Features • Ultra Low On-Resistance - rDS(ON) = 0.052Ω, VGS = 10V - rDS(ON) = 0.054Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electriecal Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76629D3 HUF76629D3S Symbol D • Switching Time vs RGS Curves Ordering Information PART NUMBER PACKAGE TO-251AA TO-252AA BRAND 76629D 76629D HUF76629D3 G S HUF76629D3S NOTE: When ordering, use the entire part number.
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