Fairchild Semiconductor HUF76629D3S
N-Channel MOSFET
FEATURES
● Ultra Low On-Resistance - rDS(ON) = 0.052Ω, VGS = 10V - rDS(ON) = 0.054Ω, VGS = 5V● Simulation Models - Temperature Compensated PSPICE® and SABER™ Electriecal Models - Spice and SABER Thermal Impedance Models -
● Peak Current vs Pulse Width Curve
● UIS Rating Curve SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76629D3 HUF76629D3S Symbol D
● Switching Time vs RGS Curves Ordering Information PART NUMBER PACKAGE TO-251AA TO-252AA BRAND 76629D 76629D HUF76629D3 G S HUF76629D3S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76629D3ST.
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified HUF76629D3, HUF76629D3S UNITS V V V A A A A 100 100 ±16 20 20 20 20 Figure 4 Figures 6, 17, 18 110 0.74 -55 to 175 300 260 W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .