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HUF76639P3 - N-Channel MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.026Ω, VGS = 10V - rDS(ON) = 0.027Ω, VGS = 5V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Switching Time vs RGS Curves HUF76639P3 HUF76639S3S Symbol D Ordering Information PART NUMBER.

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📁 Similar Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUF76639P3, HUF76639S3S Data Sheet December 2001 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) Features • Ultra Low On-Resistance - rDS(ON) = 0.026Ω, VGS = 10V - rDS(ON) = 0.027Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves HUF76639P3 HUF76639S3S Symbol D Ordering Information PART NUMBER PACKAGE TO-220AB TO-263AB BRAND 76639P 76639S HUF76639P3 G S HUF76639S3S NOTE: When ordering, use the entire part number.