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HUFA75333P3 - N-Channel MOSFET

Key Features

  • 49A, 55V.
  • Ultra Low On-Resistance, rDS(ON) = 0.024Ω.
  • Temperature Compensating PSPICE® and SABER™ Models - Available on the web at: www. fairchildsemi. com.
  • Thermal Impedance PSPICE and SABER Models.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER HUFA75329G3 HUFA75329P3 HUFA75329S3S.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
HUFA75333G3 N-Channel MOSFET
HUFA75333S3S N-Channel MOSFET
HUFA75332G3 N-Channel MOSFET
HUFA75332P3 N-Channel MOSFET
HUFA75332S3S N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75329.