HUFA75429D3S - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	HUFA75429D3S
Manufacturer	Fairchild Semiconductor
File Size	290.76 KB
Description	N-Channel MOSFET
Datasheet	HUFA75429D3S Datasheet
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These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process.

This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance.

175°C Maximum Junction Temperature.
UIS Capability (Single Pulse and Repetitive Pulse).
Ultra-Low On-Resistance rDS(ON) = 0.025Ω, VGS = 10V DRAIN (FLANGE) D GATE SOURCE G S TO-252 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 125oC, VGS = 10V, RθJA = 52oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Not.

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Published: Mar 26, 2005 |