HUFA75429D3S Overview
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
HUFA75429D3S Key Features
- 175°C Maximum Junction Temperature
- UIS Capability (Single Pulse and Repetitive Pulse)
- Ultra-Low On-Resistance rDS(ON) = 0.025Ω, VGS = 10V