HUFA75829D3
HUFA75829D3 is N-Channel MOSFET manufactured by Fairchild Semiconductor.
Features
SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE)
- Ultra Low On-Resistance
- r DS(ON) = 0.110Ω, VGS = 10V
- Simulation Models
- Temperature pensated PSPICE® and SABER™ Electrical Models
- Spice and SABER Thermal Impedance Models
- .fairchildsemi.
- Peak Current vs Pulse Width Curve
HUFA75829D3S
Symbol
- UIS Rating Curve
Ordering Information
PART NUMBER PACKAGE TO-251AA TO-252AA BRAND 75829D 75829D HUFA75829D3 HUFA75829D3S
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA75829D3ST. TC = 25o C, Unless Otherwise Specified HUFA75829D3, HUFA75829D3S UNITS V V V A A 150 150 ±20 18 13 Figure 4 Figures 6, 14, 15 110 0.73 -55 to 175 300 260 W W/o C o C o C o C
Absolute Maximum Ratings
Drain to Source Voltage (Note 1)
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- . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1)
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- . . VDGR Gate to Source Voltage
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- VGS Drain Current Continuous (TC = 25o C, VGS = 10V) (Figure 2)
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- - . . . . ID Continuous (TC = 100o C, VGS = 10V) (Figure 2)
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