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HUFA76404DK8T - N-Channel Dual MOSFET

Key Features

  • rDS(ON) = 110mΩ (Typ. ), VGS = 5V, ID = 3.2A.
  • Qg(tot) = 3.8nC (Typ. ), VGS = 5V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • Optimized efficiency at high frequencies.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Internal RG = 100Ω.
  • Qualified to AEC Q101.

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HUFA76404DK8T N-Channel Dual MOSFET April 2005 HUFA76404DK8T N-Channel Dual MOSFET 62V, 3.2A, 132mΩ Features „ rDS(ON) = 110mΩ (Typ.), VGS = 5V, ID = 3.2A „ Qg(tot) = 3.8nC (Typ.), VGS = 5V „ Low Miller Charge „ Low QRR Body Diode „ Optimized efficiency at high frequencies „ UIS Capability (Single Pulse and Repetitive Pulse) „ Internal RG = 100Ω „ Qualified to AEC Q101 Applications „ Motor / Body Load Control „ ABS Systems „ Powertrain Management „ Injection Systems „ DC-DC converters and Off-line UPS „ Distributed Power Architectures and VRMs „ Primary Switch for 12V and 24V systems Branding Dash 1 2 3 4 SO-8 5 SOURCE 1 (1) GATE 1 (2) SOURCE 2 (3) GATE 2 (4) DRAIN 1 (8) DRAIN 1 (7) DRAIN 2 (6) DRAIN 2 (5) ©2005 Fairchild Semiconductor Corporation HUFA76404DK8T Rev. B 1 www.