HUFA76413DK8T Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Datasheet Details

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process.

This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance.

This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.

HUFA76413DK8T January 2003 HUFA76413DK8T N-Channel Logic Level UltraFET® Power MOSFET 60V, 4.

150°C Maximum Junction Temperature UIS Capability (Single Pulse and Repetitive Pulse) Ultra-Low On-Resistance rDS(ON) = 0.049Ω, VGS = 10V Ultra-Low On-Resistance rDS(ON) = 0.056Ω, VGS = 5V D1 (8) D1 (7) D2 (6) D2 (5) 1 SO-8 S1 (1) G1 (2) S2 (3) G2 (4) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 25oC.