IRF550 - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	IRF550
Manufacturer	Fairchild Semiconductor
File Size	261.73 KB
Description	Advanced Power MOSFET
Datasheet	IRF550 Datasheet
Additional preview pages of the IRF550 datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ. ) Ο IRF550A BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Ο Value 1.

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Published: Apr 16, 2005 |