Datasheet4U Logo Datasheet4U.com

IRF654A - Advanced Power MOSFET

Datasheet Summary

Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current : 10 µA (Max. ) @ VDS = 250V.
  • Low RDS(ON) : 0.108 Ω (Typ. ) IRF654A BVDSS = 250 V RDS(on) = 0.14 Ω ID = 21 A TO-220 1 2 3 www. DataSheet4U. com 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-S.

📥 Download Datasheet

Datasheet preview – IRF654A

Datasheet Details

Part number IRF654A
Manufacturer Fairchild Semiconductor
File Size 272.32 KB
Description Advanced Power MOSFET
Datasheet download datasheet IRF654A Datasheet
Additional preview pages of the IRF654A datasheet.

📁 Similar Datasheet

  • IRF654A - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF650A - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF650A - Advanced Power MOSFET (Samsung)
  • IRF650A - Advanced Power MOSFET (Fairchild)
  • IRF60B217 - N-Channel MOSFET (INCHANGE)
  • IRF60B217 - IR MOSFET (Infineon)
  • IRF60DM206 - N-Channel Power MOSFET (International Rectifier)
  • IRF60R217 - N-Channel MOSFET (INCHANGE)
  • IRF60R217 - IR MOSFET (Infineon)
  • IRF610 - N-Channel Mosfet Transistor (Inchange Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
Advanced Power MOSFET FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 250V ♦ Low RDS(ON) : 0.108 Ω (Typ.) IRF654A BVDSS = 250 V RDS(on) = 0.14 Ω ID = 21 A TO-220 1 2 3 www.DataSheet4U.com 1.Gate 2. Drain 3.
Published: |