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IRFD9110
Data Sheet January 2002
0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17541.
Features
• 0.7A, 100V • rDS(ON) = 1.
IRFD9110 Datasheet
