IRFD9110
Features
- 0.7A, 100V
- r DS(ON) = 1.200Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
Symbol
Ordering Information
PART NUMBER IRFD9110 PACKAGE HEXDIP BRAND IRFD9110
NOTE: When ordering, use the entire part number.
Packaging
HEXDIP
DRAIN GATE SOURCE
©2002 Fairchild Semiconductor Corporation
IRFD9110 Rev. B
Absolute Maximum Ratings
TC = 25o C, Unless Otherwise Specified IRFD9110 -100 -100 -0.7 -3.0 ±20 1.0 0.008 190 -55 to 150 300 260 UNITS V V A A V W W/o C m J o C o C o C
Drain to Source Breakdown Voltage (Note 1)
- -
- -
- -
- -
- . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1)
- -
- -
- -
- -
- VDGR Continuous Drain Current
- -
- -
- -
- - . ....
