IRFI540A Datasheet | Fairchild Semiconductor

FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175℃ Operating Temperature n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V .. IRFW/I540A BVDSS = 100 V RDS(on) = 0.052 Ω ID = 28 A D2-PAK I2-PAK n Lower RDS(ON) : 0.041 Ω (Typ.) 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25℃) - Total Power Dissipation (TC=25℃) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds ② ① ① ③ ① Value 100 28 19.8 110 ±20 523 28 10.7 6.5 3.8 107 0.71 - 55 to +175 Units V A A V m J A m J V/ns W W W/℃ ℃ 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient - Junction-to-Ambient Typ. ---Max. 1.4 40 62.5 ℃/W Units - When mounted on the minimum pad size remended (PCB Mount). Rev. B1 2001 Fairchild Semiconductor Corporation IRFW/I540A Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS .. N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25℃ unless otherwise specified) Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(밠iller? Charge Min. Typ. Max. Units 100 -2.0 -----------------0.11 ------22.56 325 148 18 18 90 56 60 10.8...