IRFI614A
Overview
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 250V
- Lower RDS(ON): 1.393Ω (Typ.)
| Part | IRFI614A |
|---|---|
| Description | Power MOSFET |
| Category | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Size | 228.56 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRFI614G | International Rectifier | Power MOSFET |
| IRFI614GPBF | International Rectifier | Power MOSFET |
| IRFI614G | Vishay | Power MOSFET |
| IRFI610A | Samsung Semiconductor | Power MOSFET |