IRFI630B Key Features
- 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% av
- Part: IRFI630B
- Description: 200V N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 648.95 KB
Other IRFI630B Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
International Rectifier |
IRFI630 | Power MOSFET |
Samsung Semiconductor |
IRFI630A | Power MOSFET |
|
International Rectifier |
IRFI630G | Power MOSFET |
Vishay |
IRFI630G | Power MOSFET |