IRFI630B Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Download the IRFI630B datasheet PDF. This datasheet also includes the IRFW630B variant, as both parts are published together in a single manufacturer document.

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IRFI630B n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRFW630B_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRFI630B
Manufacturer	Fairchild (now onsemi)
File Size	671.69 KB
Description	N-Channel MOSFET
Datasheet	IRFI630B Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Overview

IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General.

Key Features

9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G S D2-PAK IRFW Series G D S I2-PAK IRFI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Contin.

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