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IRFI730B - 400V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

  • 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
  • ◀ ▲.
  • G! G S D2-PAK IRFW Series G D S I2-PAK IRFI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuou.

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Datasheet Details

Part number IRFI730B
Manufacturer Fairchild Semiconductor
File Size 681.53 KB
Description 400V N-Channel MOSFET
Datasheet download datasheet IRFI730B Datasheet
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Full PDF Text Transcription

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IRFW730B / IRFI730B November 2001 IRFW730B / IRFI730B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. Features • • • • • • 5.5A, 400V, RDS(on) = 1.
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