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IRFIZ34A - Power MOSFET

Datasheet Summary

Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • 175°C Operating Temperature.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 60V.
  • Lower RDS(ON): 0.030Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curren.

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Datasheet preview – IRFIZ34A

Datasheet Details

Part number IRFIZ34A
Manufacturer Fairchild Semiconductor
File Size 223.72 KB
Description Power MOSFET
Datasheet download datasheet IRFIZ34A Datasheet
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Full PDF Text Transcription

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$GYDQFHG 3RZHU 026)(7 IRFW/IZ34A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.030Ω (Typ.
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