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IRFIZ44A Datasheet Advanced Power MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: .. $GYDQFHG 3RZHU 026)(7.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • 175° C Operating Temperature.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 60V.
  • Lower RDS(ON): 0.020Ω (Typ. ) IRFW/IZ44A BVDSS = 60 V RDS(on) = 0.024Ω ID = 50 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Charac.

IRFIZ44A from other manufacturers

Brand Logo Part Number Description Other Manufacturers
Samsung Logo IRFIZ44A Power MOSFET Samsung
International Rectifier Logo IRFIZ44G HEXFET POWER MOSFET International Rectifier
INCHANGE Logo IRFIZ44G N-Channel MOSFET INCHANGE
Vishay Logo IRFIZ44G Power MOSFET Vishay
International Rectifier Logo IRFIZ44GPBF Power MOSFET International Rectifier

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IRFIZ44A Distributor