Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
Features
- 0.6A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!
"
G!
! "
" "
TO-92
IRFN Series
GDS
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TA = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TA = 25°C) Drain Current - Continuous (TA = 70°C) Drain Current.
IRFN214B Datasheet
