IRFN214B - 250V N-Channel MOSFET

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Fairchild Semiconductor

Part number	IRFN214B
Manufacturer	Fairchild Semiconductor
File Size	643.17 KB
Description	250V N-Channel MOSFET
Datasheet	IRFN214B Datasheet
Additional preview pages of the IRFN214B datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

0.6A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! ! " " " TO-92 IRFN Series GDS ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TA = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TA = 25°C) Drain Current - Continuous (TA = 70°C) Drain Current.

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Published: Oct 16, 2007 |