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IRFP350A Datasheet Advanced Power MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 400V.
  • Low RDS(ON): 0.254Ω (Typ. ) 1 IRFP350A BVDSS = 400 V RDS(on) = 0.3Ω ID = 17 A TO-3P 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Dr.

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IRFP350A Distributor