IRFP350A Datasheet (PDF) Download
Fairchild Semiconductor
IRFP350A

Overview

  • Avalanche Rugged Technology
  • Rugged Gate Oxide Technology
  • Lower Input Capacitance
  • Improved Gate Charge
  • Extended Safe Operating Area
  • Lower Leakage Current: 10µA (Max.) @ VDS = 400V
  • Low RDS(ON): 0.254Ω (Typ.) 1 IRFP350A BVDSS = 400 V RDS(on) = 0.3Ω ID = 17 A TO-3P 2 3
  • Drain
  • Source