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IRFP450B Datasheet 500V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: IRFP450B November 2001 IRFP450B 500V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

Key Features

  • 14A, 500V, RDS(on) = 0.39Ω @VGS = 10 V Low gate charge ( typical 87 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • ◀ ▲.
  • G! TO-3P G DS IRFP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Dr.

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