IRFP460C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies and power factor corrections.
Features
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- - 20A, 500V, RDS(on) = 0.24Ω @VGS = 10 V Low gate charge ( typical 130n C) Low Crss ( typical 60 p F) Fast switching 100% avalanche tested Improved dv/dt capability
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TO-3P
G DS
IRFP Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage
- Continuous (TC = 25°C) Drain Current
- Continuous (TC = 100°C) Drain Current
- Pulsed
(Note 1)
IRFP460C 500 20 12.5 80 ± 30
(Note 2) (Note 1) (Note 1) (Note...
