Fairchild Semiconductor IRFR310
Power MOSFET
| Part No. | IRFR310 |
|---|---|
| Datasheet | IRFR310 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 2.815Ω (Typ.) BVDSS = 400 V RDS(on) = 3.6Ω ID = 1.7 A D-PAK I-PAK 2 11 3 2 3ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor (3) Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds 1. Gate 2. Drain 3. Source Value 400 1.7 1.1 6 ±30 116 1.7 2.6 4.0 2.5 26 0.21 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W W/°C °C Thermal Resistance Symbol Characteristic Typ.
