IRFR410B
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
Features
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- - 0.9A, 500V, RDS(on) = 10Ω @VGS = 10 V Low gate charge ( typical 5.1 n C) Low Crss ( typical 3.6 p F) Fast switching 100% avalanche tested Improved dv/dt capability
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D-PAK
IRFR Series
I-PAK
IRFU Series
G!
Data Shee
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage
- Continuous (TC = 25°C) Drain Current
- Continuous (TC = 100°C) Drain Current
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