Datasheet4U Logo Datasheet4U.com

IRFR9024 - P-Channel MOSFET

General Description

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Key Features

  • • -8.8 A, -60 V. RDS(ON) = 0.28 Ω @ VGS = -10 V • Low gate charge. • Fast switching speed. • High performance technology for low RDS(ON). '.
  • 6 72 $.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFR9024 Power MOSFET IRF
IRFR9024 P Channel Power MOSFET Intersil
IRFR9024 P-Channel Power MOSFETS Samsung Electronics
IRFR9024 Power MOSFET Vishay Siliconix
IRFR9024N Power MOSFET IRF

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRFR014 Power MOSFET
IRFR014A ADVANCED POWER MOSFET
IRFR034 Power MOSFET
IRFR110 N-Channel Power MOSFETs
IRFR120A Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFR9024 August 1999 DISTRIBUTION GROUP* IRFR9024 P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • -8.8 A, -60 V. RDS(ON) = 0.28 Ω @ VGS = -10 V • Low gate charge. • Fast switching speed. • High performance technology for low RDS(ON).