IRFS450
FEATURES
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 500V
- Lower RDS(ON): 0.308Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
IDM VGS EAS IAR EAR dv/dt
TJ , TSTG
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C) Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 500 V RDS(on) = 0.4Ω ID = 9.6 A
TO-3PF
1 2 3
1.Gate 2. Drain 3. Source
Value 500 9.6 6.1 56 ±30 1024 9.6 9.6 3.5 96...
